FC157 Datasheet, Equivalent, Cross Reference Search
Type Designator: FC157
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SO6
FC157 Transistor Equivalent Substitute - Cross-Reference Search
FC157 Datasheet (PDF)
fc157.pdf
Ordering number:EN5433FC157NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067Aing efficiency greatly.[FC157] The FC157 is formed with two chips, being equiva-lent to the
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .