FC157 Datasheet and Replacement
Type Designator: FC157
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SO6
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FC157 Datasheet (PDF)
fc157.pdf

Ordering number:EN5433FC157NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067Aing efficiency greatly.[FC157] The FC157 is formed with two chips, being equiva-lent to the
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MMBT4122 | 2SA1721 | 2SA1051A | 2SA843 | 2SB96 | 2SB464 | 2N1963
Keywords - FC157 transistor datasheet
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History: MMBT4122 | 2SA1721 | 2SA1051A | 2SA843 | 2SB96 | 2SB464 | 2N1963



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