FC157 Datasheet and Replacement
Type Designator: FC157
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SO6
FC157 Substitution
FC157 Datasheet (PDF)
fc157.pdf

Ordering number:EN5433FC157NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067Aing efficiency greatly.[FC157] The FC157 is formed with two chips, being equiva-lent to the
Datasheet: FC112 , FC113 , FC114 , FC115 , FC116 , FC119 , FC120 , FC156 , TIP31C , FCS6208 , FCS6209 , FCS9010 , FCS9011D , FCS9011E , FCS9011F , FCS9011G , FCS9011H .
History: 2SA1727 | BUW49 | CN303 | UN4116S
Keywords - FC157 transistor datasheet
FC157 cross reference
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History: 2SA1727 | BUW49 | CN303 | UN4116S



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