FC157 Specs and Replacement
Type Designator: FC157
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 11000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SO6
FC157 Substitution
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FC157 datasheet
Ordering number EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2067A ing efficiency greatly. [FC157] The FC157 is formed with two chips, being equiva- lent to the ... See More ⇒
Detailed specifications: FC112, FC113, FC114, FC115, FC116, FC119, FC120, FC156, A733, FCS6208, FCS6209, FCS9010, FCS9011D, FCS9011E, FCS9011F, FCS9011G, FCS9011H
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