FCX653 Datasheet, Equivalent, Cross Reference Search
Type Designator: FCX653
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: SOT89
FCX653 Transistor Equivalent Substitute - Cross-Reference Search
FCX653 Datasheet (PDF)
fcx658a.pdf
SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FCX658AISSUE 1 NOVEMBER 2000FEATURESC* 400 Volt VCEO* 0.5 Amp continuous current* Ptot=1 Watt* Optimised hfe characterised upto 200mAEAPPLICATIONSC* Telephone dialler circuitsB* Hook switches for modemsSOT89* Predrivers within HID lamp ballasts* (SLIC) Subscriber Line Interface CardsPartmarking
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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