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FCX653 Specs and Replacement

Type Designator: FCX653

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: SOT89

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FCX653 datasheet

 9.1. Size:75K  diodes

fcx658a.pdf pdf_icon

FCX653

SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FCX658A ISSUE 1 NOVEMBER 2000 FEATURES C * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA E APPLICATIONS C * Telephone dialler circuits B * Hook switches for modems SOT89 * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards Partmarking... See More ⇒

Detailed specifications: FCX5550, FCX558, FCX589, FCX591, FCX591A, FCX596, FCX604, FCX649, BC547, FCX704, FCX749, FCX753, FD-1029GM, FD-1029JN, FD-1029MM, FD-1029PA, FD-1029PE

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