All Transistors. 2N3664 Datasheet

 

2N3664 Datasheet and Replacement


   Type Designator: 2N3664
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO31
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2N3664 Datasheet (PDF)

 9.1. Size:299K  fairchild semi
 2n3663.pdf pdf_icon

2N3664

2N3663B TO-92CENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VV Collector-Base Voltage 30 VCBO

 9.2. Size:229K  no
 2n3668.pdf pdf_icon

2N3664

 9.3. Size:11K  semelab
 2n3665.pdf pdf_icon

2N3664

2N3665Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1.0A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 9.4. Size:181K  inchange semiconductor
 2n3667.pdf pdf_icon

2N3664

isc Silicon NPN Power Transistor 2N3667DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

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History: 2N1682 | 2N1337 | 2SA1579N | 2N1212 | 2S121 | 2N2290 | 2N1636

Keywords - 2N3664 transistor datasheet

 2N3664 cross reference
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