2N3667 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3667
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2N3667 Transistor Equivalent Substitute - Cross-Reference Search
2N3667 Datasheet (PDF)
2n3667.pdf
isc Silicon NPN Power Transistor 2N3667DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for general purpose high power switch andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2n3663.pdf
2N3663B TO-92CENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VV Collector-Base Voltage 30 VCBO
2n3665.pdf
2N3665Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1.0A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N366 , 2N3660 , 2N3661 , 2N3662 , 2N3663 , 2N3664 , 2N3665 , 2N3666 , D209L , 2N367 , 2N3671 , 2N3672 , 2N3673 , 2N3675 , 2N3676 , 2N3677 , 2N3678 .
