All Transistors. FMMT4140 Datasheet

 

FMMT4140 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FMMT4140
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO236

 FMMT4140 Transistor Equivalent Substitute - Cross-Reference Search

   

FMMT4140 Datasheet (PDF)

 8.1. Size:376K  diodes
fmmt413.pdf

FMMT4140
FMMT4140

FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 50A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 150V UL Flammability Classification Rating 94V-0 BVCEO > 50V Moisture Sensitivity: Level 1 per J-STD-020 Specifically designed for Av

 8.2. Size:27K  diodes
fmmt4126.pdf

FMMT4140

SOT SI I O A A T 6S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

 8.3. Size:27K  diodes
fmmt4124.pdf

FMMT4140

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

 8.4. Size:27K  diodes
fmmt4125.pdf

FMMT4140

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I DA SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

 8.5. Size:27K  diodes
fmmt4123.pdf

FMMT4140

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

 8.6. Size:534K  diodes
fmmt415 fmmt417.pdf

FMMT4140
FMMT4140

FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 260V (415) & 320V (417) UL Flammability Classification Rating 94V-0 BVCEO > 100V Moisture Sensitivity: Level 1 per J-STD-020

 8.7. Size:386K  htsemi
fmmt4124.pdf

FMMT4140

FMMT4124TRANSISTOR (NPN) SOT23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T

 8.8. Size:134K  zetex
fmmt413.pdf

FMMT4140
FMMT4140

FMMT413SOT23 NPN silicon planar avalanche transistorSummaryV(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25ADescriptionThe FMMT413 is a NPN silicon planar bipolar transistor optimized foravalanche mode operation. Tight process control and low inductancepackaging combine to produce high current pulses with fast edges, idealfor laser diode driving.FeaturesC Avalanche mode opera

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: PBSS4021SPN

 

 
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