FMMT4889 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMMT4889
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO236
FMMT4889 Transistor Equivalent Substitute - Cross-Reference Search
FMMT4889 Datasheet (PDF)
fmmt489.pdf
A Product Line ofDiodes IncorporatedFMMT48930V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 30V Case: SOT-23 IC = 1A high Continuous Collector Current Case material: Molded Plastic. Green Molding Compound. ICM Up to 4A Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics Up To 4A Moisture Sens
fmmt489.pdf
FMMT489SMD Type ICSMD Type TransistorsMedium Power TransistorSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVery low equivalent on-resistance12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-emitter voltage VCEO 30 VEmitter-base v
fmmt489.pdf
FMMT489NPN Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. SOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1 A Po
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
