FMMT5447 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMMT5447
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO236
FMMT5447 Transistor Equivalent Substitute - Cross-Reference Search
FMMT5447 Datasheet (PDF)
fmmt549.pdf
August 2009FMMT549PNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from process PB.32SuperSOT-231Marking : 5491. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emi
fmmt549 fmmt549a.pdf
A Product Line ofDiodes IncorporatedFMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -30V Case: SOT23 Maximum Continuous Collector Current IC = -1A UL Flammability Rating 94V-0 500mW power dissipation Case material: molded Plastic. Complementary type: Moisture Sensitivity: L
fmmt5400 fmmt5401.pdf
SOT SI I O A A T 00HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
