2SB1561-Q Datasheet and Replacement

Product specification2SB1561-QSOT-89 Unit: mm+0.1 +0.14.50-0.1 1.50-0.1 Features+0.11.80-0.1 Collector Current Capability IC=-2ACollector Emitter Voltage VCEO=-60V2 3Low saturation Voltage typically 1+0.1 +0.1 +0.10.48-0.1 0.53-0.1 0.44-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA1. Base1. Source1 Base+0.13.00-0.12 Collector2. Collector2. Drai

2SB1561DatasheetMiddle Power Transistor (-60V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-60VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=-150mV at IC/IB=-1A/-50mA.2)Collector-emitter voltage=-60V3)PD=2W (Mounted on a ceramic board(40400.7mm) ).4)Complementary NPN Types

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T

SMD Type TransistorsPNP Transistors2SB1561SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V Complements the 2SD23910.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -