FN1L3N Specs and Replacement

Type Designator: FN1L3N

SMD Transistor Code: M82

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO236

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FN1L3N datasheet

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Detailed specifications: FN1A3Q, FN1A4M, FN1A4P, FN1A4Z, FN1F4M, FN1F4N, FN1F4Z, FN1L3M, 2SC2383, FN1L3Z, FN1L4L, FN1L4M, FN1L4Z, FOS100, FOS101, FOS102, FOS104

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