FOS100 Specs and Replacement

Type Designator: FOS100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO18

 FOS100 Substitution

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FOS100 datasheet

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Detailed specifications: FN1F4N, FN1F4Z, FN1L3M, FN1L3N, FN1L3Z, FN1L4L, FN1L4M, FN1L4Z, 2SC828, FOS101, FOS102, FOS104, FP5010, FP50201, FP50301, FP50401, FP50501

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