2N3700CSM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3700CSM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: LCC3
2N3700CSM Transistor Equivalent Substitute - Cross-Reference Search
2N3700CSM Datasheet (PDF)
2n3700hr.pdf
2N3700HRHi-Rel 80 V, 1 A NPN transistorDatasheet - production dataFeatures 1BVCEO 80 V23IC(max) 1 A33 TO-184HFE at 10 V - 150 mA >1001122 LCC-3UB Hermetic packagesPin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rateFigure 1. Internal schematic diagram DescriptionThe 2N3700HR is a NPN tr
2n3700.pdf
2N3700General purpose amplifiersDescriptionThe 2N3700 is silicon planar epitaxial NPNtransistor in Jedec TO-18 metal case. It isintended for small signal, low noise industrialapplications.TO-18Internal schematic diagramOrder codesPart Number Marking Package Packing2N3700 2N3700 TO-18 BagNovember 2006 Rev 2 1/7www.st.com 7Electrical ratings 2N37001 Electrical ratin
2n3700 2n3701.pdf
DATA SHEET2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V
2n3700 01.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N37002N3701TO-18General purpose amplifierABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 140 VCollector -Emitter Voltage VCEO 80 VEmitter -Base Voltage VEBO 7.0 VCollector Current IC 1.0 APower Dissipation @
2n3019 2n3057 2n3700.pdf
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector
Datasheet: 2N3690 , 2N3691 , 2N3692 , 2N3693 , 2N3694 , 2N37 , 2N370 , 2N3700 , B647 , 2N3700DCSM , 2N3700UB , 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 .