All Transistors. 2N3700CSM Datasheet

 

2N3700CSM Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3700CSM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: LCC3

 2N3700CSM Transistor Equivalent Substitute - Cross-Reference Search

   

2N3700CSM Datasheet (PDF)

 8.1. Size:428K  st
2n3700hr.pdf

2N3700CSM 2N3700CSM

2N3700HRHi-Rel 80 V, 1 A NPN transistorDatasheet - production dataFeatures 1BVCEO 80 V23IC(max) 1 A33 TO-184HFE at 10 V - 150 mA >1001122 LCC-3UB Hermetic packagesPin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rateFigure 1. Internal schematic diagram DescriptionThe 2N3700HR is a NPN tr

 8.2. Size:109K  st
2n3700.pdf

2N3700CSM 2N3700CSM

2N3700General purpose amplifiersDescriptionThe 2N3700 is silicon planar epitaxial NPNtransistor in Jedec TO-18 metal case. It isintended for small signal, low noise industrialapplications.TO-18Internal schematic diagramOrder codesPart Number Marking Package Packing2N3700 2N3700 TO-18 BagNovember 2006 Rev 2 1/7www.st.com 7Electrical ratings 2N37001 Electrical ratin

 8.3. Size:108K  central
2n3700 2n3701.pdf

2N3700CSM 2N3700CSM

DATA SHEET2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V

 8.4. Size:256K  cdil
2n3700 01.pdf

2N3700CSM 2N3700CSM

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N37002N3701TO-18General purpose amplifierABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 140 VCollector -Emitter Voltage VCEO 80 VEmitter -Base Voltage VEBO 7.0 VCollector Current IC 1.0 APower Dissipation @

 8.5. Size:71K  microsemi
2n3019 2n3057 2n3700.pdf

2N3700CSM 2N3700CSM

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top