FT50 Specs and Replacement

Type Designator: FT50

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 FT50 Substitution

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FT50 datasheet

 0.1. Size:104K  ixys

ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf pdf_icon

FT50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

 0.2. Size:294K  ixys

ixft50n85xhv ixfh50n85x ixfk50n85x.pdf pdf_icon

FT50

X-Class HiPerFETTM VDSS = 850V IXFT50N85XHV Power MOSFET ID25 = 50A IXFH50N85X RDS(on) 105m IXFK50N85X TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Co... See More ⇒

 0.3. Size:102K  ixys

ixft50n20.pdf pdf_icon

FT50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

 0.4. Size:184K  ixys

ixfh50n60x ixfq50n60x ixft50n60x.pdf pdf_icon

FT50

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X RDS(on) 73m IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D VDGR TJ = 25 C to 1... See More ⇒

Detailed specifications: FT431, FT4354, FT4355, FT4356, FT45, FT47, FT48, FT49, 2222A, FT5040, FT5041, FT5415, FT5722R, FT5726DR, FT5727BR, FT5727DR, FT5728DR

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