2N3713HS Datasheet and Replacement
Type Designator: 2N3713HS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
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2N3713HS Datasheet (PDF)
2n3713 2n3714 2n3715 2n3716.pdf

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2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
2n3713smd.pdf

2N3713SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5075 | 2N5387 | 2N5080 | 2N1250-1 | 2N1315 | 2N545 | 2N5037
Keywords - 2N3713HS transistor datasheet
2N3713HS cross reference
2N3713HS equivalent finder
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History: 2N5075 | 2N5387 | 2N5080 | 2N1250-1 | 2N1315 | 2N545 | 2N5037



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