FXT649 Specs and Replacement

Type Designator: FXT649

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

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FXT649 datasheet

 ..1. Size:28K  diodes

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FXT649

NPN SILICON PLANAR FXT649 MEDIUM POWER TRANSISTOR ISSUE 1 FEB 94 T V I V i i I I TI i E-Line T T TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I V ... See More ⇒

Detailed specifications: FXT56SM, FXT601B, FXT601BSM, FXT603, FXT603SM, FXT605, FXT605SM, FXT614, 2N2222, FXT649SM, FXT651, FXT651SM, FXT653, FXT653SM, FXT655, FXT655SM, FXT657

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