All Transistors. FXT649 Datasheet

 

FXT649 Datasheet and Replacement


   Type Designator: FXT649
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
 

 FXT649 Substitution

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FXT649 Datasheet (PDF)

 ..1. Size:28K  diodes
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FXT649

NPN SILICON PLANARFXT649MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i i I I TI i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I V

Datasheet: FXT56SM , FXT601B , FXT601BSM , FXT603 , FXT603SM , FXT605 , FXT605SM , FXT614 , C1815 , FXT649SM , FXT651 , FXT651SM , FXT653 , FXT653SM , FXT655 , FXT655SM , FXT657 .

History: 2SC3944A | 2SC1740 | CSD1506P | MMBT404 | 2SD1609 | MMBT4354 | 40306

Keywords - FXT649 transistor datasheet

 FXT649 cross reference
 FXT649 equivalent finder
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