All Transistors. 2N3715 Datasheet

 

2N3715 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3715
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO204AA

 2N3715 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3715 Datasheet (PDF)

 ..1. Size:272K  motorola
2n3715 2n3716.pdf

2N3715 2N3715

Order this documentMOTOROLAby 2N3715/DSEMICONDUCTOR TECHNICAL DATANPN2N3715Silicon NPN Power Transistors2N3716. . . designed for mediumspeed switching and amplifier applications. These devicesfeature: Total Switching Time at 3 A typically 1.15 s10 AMPERE Gain Ranges Specified at 1 A and 3 APOWER TRANSISTORS Low VCE(sat): typically 0.5 V at IC = 5 A and

 ..2. Size:88K  central
2n3713 2n3714 2n3715 2n3716.pdf

2N3715 2N3715

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..3. Size:174K  aeroflex
2n3715 2n3716.pdf

2N3715 2N3715

NPN Power Silicon Transistor2N3715 & 2N3716Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N3715 2N3716 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 4.0 AdcCollector Current IC 10 AdcTotal Power Diss

 ..4. Size:38K  inchange semiconductor
2n3715 2n3716.pdf

2N3715 2N3715

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION DC Current Gain- : hFE= 50-150@IC= 1A Wide Area of Safe Operation Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A Complement to Type 2N3791/3792 APPLICATIONS Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMU

 0.1. Size:172K  comset
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf

2N3715 2N3715

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat

 0.2. Size:11K  semelab
2n3715x.pdf

2N3715

2N3715XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.3. Size:10K  semelab
2n3715smd.pdf

2N3715

2N3715SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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