GBC109 Datasheet. Specs and Replacement

Type Designator: GBC109

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

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GBC109 datasheet

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Detailed specifications: GA52837, GA52996, GA53104, GA53149, GA53194, GA53213, GA53233, GA53270, 2N3055, GBD179, GBD189, GBD190, GBD266, GBD267, GBD645, GBD646, GC100

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