GBD179 Datasheet. Specs and Replacement

Type Designator: GBD179

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 GBD179 Substitution

- BJT ⓘ Cross-Reference Search

 

GBD179 datasheet

NO PDF data!

Detailed specifications: GA52996, GA53104, GA53149, GA53194, GA53213, GA53233, GA53270, GBC109, BC548, GBD189, GBD190, GBD266, GBD267, GBD645, GBD646, GC100, GC101

Keywords - GBD179 pdf specs

 GBD179 cross reference

 GBD179 equivalent finder

 GBD179 pdf lookup

 GBD179 substitution

 GBD179 replacement