GBD645 Datasheet. Specs and Replacement

Type Designator: GBD645

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

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GBD645 datasheet

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Detailed specifications: GA53233, GA53270, GBC109, GBD179, GBD189, GBD190, GBD266, GBD267, 2SA1943, GBD646, GC100, GC101, GC102, GC103, GC104, GC111, GC112

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