GC111 Datasheet. Specs and Replacement

Type Designator: GC111

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.07 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.125 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

 GC111 Substitution

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GC111 datasheet

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Detailed specifications: GBD267, GBD645, GBD646, GC100, GC101, GC102, GC103, GC104, BC557, GC112, GC115, GC116, GC117, GC118, GC120, GC121, GC122

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