GC223A Specs and Replacement
Type Designator: GC223A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO92
GC223A Transistor Equivalent Substitute - Cross-Reference Search
GC223A detailed specifications
sigc223t120r2cs.pdf
SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES This chip is used for C 1200V NPT technology 175 m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering ... See More ⇒
sigc223t120r2cl.pdf
SIGC223T120R2CL IGBT Chip in NPT-technology C FEATURES This chip is used for 1200V NPT technology IGBT-Modules 180 m chip BSM150GB120DLC short circuit prove positive temperature coefficient G Applications easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4286- SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2 ... See More ⇒
Detailed specifications: GC195 , GC197 , GC198 , GC214 , GC216 , GC217 , GC221 , GC223 , 2SA1837 , GC223B , GC237 , GC238 , GC239 , GC269 , GC300 , GC300A , GC300B .
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