All Transistors. GC223A Datasheet


GC223A Datasheet, Equivalent, Cross Reference Search

Type Designator: GC223A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92

GC223A Transistor Equivalent Substitute - Cross-Reference Search


GC223A Datasheet (PDF)

9.1. sigc223t120r2cs.pdf Size:63K _infineon


SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering

9.2. sigc223t120r2cl.pdf Size:120K _infineon


SIGC223T120R2CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology IGBT-Modules 180m chipBSM150GB120DLC short circuit prove positive temperature coefficient GApplications: easy parallelingE drivesChip Type VCE ICn Die Size Package Ordering CodeQ67050-A4286-SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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