GD170 Datasheet. Specs and Replacement
Type Designator: GD170
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 33 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
GD170 Substitution
- BJT ⓘ Cross-Reference Search
GD170 datasheet
HGD170N10A , P-1 HGI170N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 16.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 39 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒
HGD170N10AL , P-1 HGI170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 38.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒
Detailed specifications: GD142, GD150, GD151, GD152, GD160, GD160A, GD160B, GD160C, S8050, GD170A, GD170B, GD170C, GD175, GD175A, GD175B, GD175C, GD180
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