GD170A Datasheet. Specs and Replacement

Type Designator: GD170A

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5.3 W

Maximum Collector-Base Voltage |Vcb|: 33 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

 GD170A Substitution

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GD170A datasheet

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GD170A

HGD170N10A , P-1 HGI170N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 16.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 39 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒

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HGD170N10AL , P-1 HGI170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 38.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

Detailed specifications: GD150, GD151, GD152, GD160, GD160A, GD160B, GD160C, GD170, 2SA1943, GD170B, GD170C, GD175, GD175A, GD175B, GD175C, GD180, GD180A

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