All Transistors. GD170B Datasheet

 

GD170B Datasheet, Equivalent, Cross Reference Search


   Type Designator: GD170B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 5.3 W
   Maximum Collector-Base Voltage |Vcb|: 33 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3

 GD170B Transistor Equivalent Substitute - Cross-Reference Search

   

GD170B Datasheet (PDF)

 9.1. Size:145K  eupec
 bsm50gd170dl.pdf

GD170B GD170B

European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH

 9.2. Size:327K  gdr
 gd160 gd170 gd175 gd180 gd240 gd241 gd242 gd243 gd244.pdf

GD170B

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , B772 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SA1352F | 2SA1486 | D4515 | 2SA1478E

 

 
Back to Top