GD175 Datasheet. Specs and Replacement

Type Designator: GD175  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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GD175 datasheet

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GD175

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 pmgd175xn.pdf pdf_icon

GD175

PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 1.3 Applications... See More ⇒

Detailed specifications: GD160, GD160A, GD160B, GD160C, GD170, GD170A, GD170B, GD170C, 13007, GD175A, GD175B, GD175C, GD180, GD180A, GD180B, GD180C, GD183

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