GD175 Datasheet, Equivalent, Cross Reference Search
Type Designator: GD175
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
GD175 Transistor Equivalent Substitute - Cross-Reference Search
GD175 Datasheet (PDF)
pmgd175xn.pdf
PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NSE459 | 2S108 | NSBC115TDP6T5G
History: NSE459 | 2S108 | NSBC115TDP6T5G
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