GE10001 Datasheet. Specs and Replacement
Type Designator: GE10001
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 325 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
GE10001 Substitution
- BJT ⓘ Cross-Reference Search
GE10001 datasheet
NO PDF data!
Detailed specifications: GD384, GD607, GD608, GD609, GD617, GD618, GD619, GE10000, 9014, GE10002, GE10003, GE10004, GE10005, GE10006, GE10007, GE10008, GE10009
Keywords - GE10001 pdf specs
GE10001 cross reference
GE10001 equivalent finder
GE10001 pdf lookup
GE10001 substitution
GE10001 replacement
