GE10008 Datasheet. Specs and Replacement

Type Designator: GE10008

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 325 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

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GE10008 datasheet

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Detailed specifications: GE10000, GE10001, GE10002, GE10003, GE10004, GE10005, GE10006, GE10007, 2SC2655, GE10009, GE10015, GE10016, GE10020, GE10021, GE10022, GE10023, GE-193

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