GE5060 Datasheet. Specs and Replacement

Type Designator: GE5060

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO3

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GE5060 datasheet

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Detailed specifications: GE10009, GE10015, GE10016, GE10020, GE10021, GE10022, GE10023, GE-193, 2SD669A, GE5061, GE5062, GE55821, GE56551, GE6060, GE6061, GE6062, GE6251

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