GES3567 Specs and Replacement
Type Designator: GES3567
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
GES3567 Substitution
- BJT ⓘ Cross-Reference Search
GES3567 datasheet
NO PDF data!
Detailed specifications: GES3495, GES3496, GES3497, GES3499, GES3563, GES3564, GES3565, GES3566, 2SC2655, GES3568, GES3569, GES3634, GES3635, GES3636, GES3637, GES3638, GES3638A
Keywords - GES3567 pdf specs
GES3567 cross reference
GES3567 equivalent finder
GES3567 pdf lookup
GES3567 substitution
GES3567 replacement
