GES3636 Specs and Replacement

Type Designator: GES3636

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 175 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 GES3636 Substitution

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GES3636 datasheet

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Detailed specifications: GES3564, GES3565, GES3566, GES3567, GES3568, GES3569, GES3634, GES3635, 2222A, GES3637, GES3638, GES3638A, GES3639, GES3640, GES3641, GES3642, GES3643

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