GES3646 Specs and Replacement

Type Designator: GES3646

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO236

 GES3646 Substitution

- BJT ⓘ Cross-Reference Search

 

GES3646 datasheet

NO PDF data!

Detailed specifications: GES3638A, GES3639, GES3640, GES3641, GES3642, GES3643, GES3644, GES3645, 2SD669, GES3691, GES3692, GES3693, GES3694, GES3721, GES3742, GES3743, GES3900

Keywords - GES3646 pdf specs

 GES3646 cross reference

 GES3646 equivalent finder

 GES3646 pdf lookup

 GES3646 substitution

 GES3646 replacement