GES5087 Specs and Replacement

Type Designator: GES5087

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO236

 GES5087 Substitution

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GES5087 datasheet

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Detailed specifications: GES4926, GES4927, GES4928, GES4929, GES4930, GES4931, GES4964, GES4965, BC558, GES5088, GES5089, GES5127, GES5128, GES5129, GES5130, GES5131, GES5132

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