2N3741A Datasheet. Specs and Replacement

Type Designator: 2N3741A  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO66

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2N3741A datasheet

 ..1. Size:62K  microsemi

 2n3741a.pdf pdf_icon

2N3741A

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741A APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cuto... See More ⇒

 ..2. Size:221K  inchange semiconductor

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2N3741A

isc Silicon PNP Power Transistor 2N3741A DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -... See More ⇒

 8.1. Size:32K  semelab

 2n3741smd.pdf pdf_icon

2N3741A

2N3741 SMD SEME LAB MECHANICAL DATA MEDIUM POWER PNP Dimensions in mm SILICON POWER TRANSISTOR LOW SATURATION VOLTAGE HIGH GAIN FEATURES Hermetically sealed Surface Mount Package. Small Footprint - efficient use of PCB space. Lightweight ... See More ⇒

 8.2. Size:62K  microsemi

 2n3741.pdf pdf_icon

2N3741A

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741 APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NP... See More ⇒

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Detailed specifications: 2N3737A, 2N3738, 2N3739, 2N374, 2N3740, 2N3740A, 2N3740AR, 2N3741, B772, 2N3741R, 2N3742, 2N3742S, 2N3743, 2N3743S, 2N3744, 2N3745, 2N3746

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