GES5141 Specs and Replacement

Type Designator: GES5141

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 6 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO236

 GES5141 Substitution

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GES5141 datasheet

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Detailed specifications: GES5132, GES5133, GES5135, GES5136, GES5137, GES5138, GES5139, GES5140, D880, GES5142, GES5143, GES5172, GES5179, GES5305, GES5306, GES5306A, GES5307

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