All Transistors. 2N3741R Datasheet

 

2N3741R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3741R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66

 2N3741R Transistor Equivalent Substitute - Cross-Reference Search

   

2N3741R Datasheet (PDF)

 8.1. Size:32K  semelab
2n3741smd.pdf

2N3741R 2N3741R

2N3741 SMDSEMELABMECHANICAL DATAMEDIUM POWER PNPDimensions in mmSILICON POWER TRANSISTOR LOW SATURATION VOLTAGEHIGH GAIN FEATURES Hermetically sealed Surface Mount Package. Small Footprint - efficient use of PCBspace. Lightweight

 8.2. Size:62K  microsemi
2n3741a.pdf

2N3741R 2N3741R

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3741AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto

 8.3. Size:62K  microsemi
2n3741.pdf

2N3741R 2N3741R

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3741APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP

 8.4. Size:221K  inchange semiconductor
2n3741a.pdf

2N3741R 2N3741R

isc Silicon PNP Power Transistor 2N3741ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -

 8.5. Size:196K  inchange semiconductor
2n3740 2n3741.pdf

2N3741R 2N3741R

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL

Datasheet: 2N3738 , 2N3739 , 2N374 , 2N3740 , 2N3740A , 2N3740AR , 2N3741 , 2N3741A , B772 , 2N3742 , 2N3742S , 2N3743 , 2N3743S , 2N3744 , 2N3745 , 2N3746 , 2N3747 .

 

 
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