GES5179 Specs and Replacement
Type Designator: GES5179
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 900 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO236
GES5179 Substitution
- BJT ⓘ Cross-Reference Search
GES5179 datasheet
NO PDF data!
Detailed specifications: GES5137, GES5138, GES5139, GES5140, GES5141, GES5142, GES5143, GES5172, 2222A, GES5305, GES5306, GES5306A, GES5307, GES5308, GES5308A, GES5368, GES5369
Keywords - GES5179 pdf specs
GES5179 cross reference
GES5179 equivalent finder
GES5179 pdf lookup
GES5179 substitution
GES5179 replacement
