GES5401R Specs and Replacement

Type Designator: GES5401R

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT23

 GES5401R Substitution

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GES5401R datasheet

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Detailed specifications: GES5371, GES5372, GES5373, GES5374, GES5375, GES5400, GES5400R, GES5401, 431, GES5447, GES5448, GES5449, GES5450, GES5451, GES5550, GES5550R, GES5551

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