GES5812 Specs and Replacement

Type Designator: GES5812

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92

 GES5812 Substitution

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GES5812 datasheet

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Detailed specifications: GES5450, GES5451, GES5550, GES5550R, GES5551, GES5551R, GES5810, GES5811, BD222, GES5813, GES5814, GES5815, GES5816, GES5817, GES5818, GES5819, GES5820

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