GES5816 Specs and Replacement

Type Designator: GES5816

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO236

 GES5816 Substitution

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GES5816 datasheet

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Detailed specifications: GES5551, GES5551R, GES5810, GES5811, GES5812, GES5813, GES5814, GES5815, BD139, GES5817, GES5818, GES5819, GES5820, GES5822, GES5823, GES5824, GES5825

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