GES5817 Specs and Replacement

Type Designator: GES5817

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 GES5817 Substitution

- BJT ⓘ Cross-Reference Search

 

GES5817 datasheet

NO PDF data!

Detailed specifications: GES5551R, GES5810, GES5811, GES5812, GES5813, GES5814, GES5815, GES5816, 2N3904, GES5818, GES5819, GES5820, GES5822, GES5823, GES5824, GES5825, GES5826

Keywords - GES5817 pdf specs

 GES5817 cross reference

 GES5817 equivalent finder

 GES5817 pdf lookup

 GES5817 substitution

 GES5817 replacement