GES5855 Specs and Replacement
Type Designator: GES5855
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO236
GES5855 Substitution
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GES5855 datasheet
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Detailed specifications: GES5823, GES5824, GES5825, GES5826, GES5827, GES5827A, GES5828, GES5828A, TIP122, GES5856, GES5857, GES5858, GES5910, GES6000, GES6001, GES6002, GES6003
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