GES5858 Specs and Replacement
Type Designator: GES5858
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO236
GES5858 Substitution
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GES5858 datasheet
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Detailed specifications: GES5826, GES5827, GES5827A, GES5828, GES5828A, GES5855, GES5856, GES5857, BD140, GES5910, GES6000, GES6001, GES6002, GES6003, GES6004, GES6005, GES6006
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