2N3763 Datasheet. Specs and Replacement
Type Designator: 2N3763 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
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2N3763 datasheet
2n3762 2n3763 2n3764 2n3765.pdf ![]()
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE... See More ⇒
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE... See More ⇒
The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 18 February 2014. MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification... See More ⇒
Detailed specifications: 2N3749, 2N375, 2N3750, 2N3751, 2N3752, 2N376, 2N3762, 2N3762S, 2SB817, 2N3763S, 2N3764, 2N3764A, 2N3765, 2N3766, 2N3766SM, 2N3767, 2N3767SM
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BJT Parameters and How They Relate
History: 2N3742 | BFX59 | 2N3739 | BFX93A | 2N3586 | 2SB239 | 2N358A
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