2N3765 Datasheet. Specs and Replacement
Type Designator: 2N3765 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO46
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2N3765 datasheet
2n3762 2n3763 2n3764 2n3765.pdf ![]()
TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 Collector-Emitter Voltage 40 60 Vdc VCEO Collector-Base Voltage 40 60 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 5.0 Vdc VE... See More ⇒
The documentation and process conversion measures necessary to comply with this document shall be INCH-POUND completed by 18 February 2014. MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification... See More ⇒
2N3766SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
Detailed specifications: 2N3752, 2N376, 2N3762, 2N3762S, 2N3763, 2N3763S, 2N3764, 2N3764A, 13005, 2N3766, 2N3766SM, 2N3767, 2N3767SM, 2N376A, 2N377, 2N3770, 2N3771
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History: BFX93A | 2N358A | 2N3789 | 2N3742 | BFX59 | 2N5760 | 2N3586
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