2N3767SM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3767SM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO252
2N3767SM Transistor Equivalent Substitute - Cross-Reference Search
2N3767SM Datasheet (PDF)
2n3767smd05.pdf
2N3767SMD05MECHANICAL DATADimensions in mm (inches)7.54 (0.296)NPN BIPOLAR TRANSISTOR 0.76 (0.030)min.IN A CERAMIC SURFACE MOUNT3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)PACKAGE FORHIGH REL APPLICATIONS1 32FEATURES HIGH VOLTAGE 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) FAST SWITCHING0.50 (0.020)max.7.26 (0.286) CER
2n3767smd.pdf
2N3767SMDMECHANICAL DATADimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE
2n3766 2n3767.pdf
NPN Power Silicon Transistor2N3766 & 2N3767Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N3766 2N3767 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 6.0 VdcBase Current IB 2.0 AdcCollector Current IC 4.0 AdcTotal Power Di
Datasheet: 2N3763 , 2N3763S , 2N3764 , 2N3764A , 2N3765 , 2N3766 , 2N3766SM , 2N3767 , 2SD669A , 2N376A , 2N377 , 2N3770 , 2N3771 , 2N3772 , 2N3773 , 2N3774 , 2N3775 .
