GME9001 Specs and Replacement
Type Designator: GME9001
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO106
GME9001 Substitution
- BJT ⓘ Cross-Reference Search
GME9001 datasheet
NO PDF data!
Detailed specifications: GME3001 , GME3002 , GME4001 , GME4002 , GME4003 , GME6001 , GME6002 , GME6003 , BC547B , GME9002 , GME9021 , GME9022 , GMJ2955 , GMJ3055 , GMO290 , GMO290A , GMO378 .
Keywords - GME9001 pdf specs
GME9001 cross reference
GME9001 equivalent finder
GME9001 pdf lookup
GME9001 substitution
GME9001 replacement
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970 | a970
