GME9001 Datasheet and Replacement
Type Designator: GME9001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO106
GME9001 Datasheet (PDF)
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Datasheet: GME3001 , GME3002 , GME4001 , GME4002 , GME4003 , GME6001 , GME6002 , GME6003 , D667 , GME9002 , GME9021 , GME9022 , GMJ2955 , GMJ3055 , GMO290 , GMO290A , GMO378 .
History: 2SC1170A
Keywords - GME9001 transistor datasheet
GME9001 cross reference
GME9001 equivalent finder
GME9001 lookup
GME9001 substitution
GME9001 replacement
History: 2SC1170A



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