GS8550T Specs and Replacement
Type Designator: GS8550T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO92
GS8550T Substitution
- BJT ⓘ Cross-Reference Search
GS8550T datasheet
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Detailed specifications: GS122, GS2012, GS2013, GS2014, GS2017, GS2017A, GS2052, GS8050T, TIP3055, GS9010, GS9011, GS9011D, GS9011E, GS9011F, GS9011G, GS9011H, GS9011I
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