GS9012D Specs and Replacement

Type Designator: GS9012D

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: TO92

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GS9012D datasheet

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Detailed specifications: GS9011D, GS9011E, GS9011F, GS9011G, GS9011H, GS9011I, GS9012, 2SB1386-R, 2SD1047, GS9012E, GS9012F, GS9013, 2SB1386-Q, GS9013D, GS9013E, GS9013F, GS9013G

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