2N378
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N378
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 106
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 100
°C
Transition Frequency (ft): 0.1
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO3
2N378
Transistor Equivalent Substitute - Cross-Reference Search
2N378
Datasheet (PDF)
0.1. Size:122K central
2n3789 2n3790 2n3791 2n3792.pdf
DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col
0.2. Size:172K comset
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf
2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
0.4. Size:10K semelab
2n3789xsmd.pdf
2N3789XSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
0.5. Size:11K semelab
2n3789x.pdf
2N3789XDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.6. Size:184K inchange semiconductor
2n3789.pdf
isc Silicon PNP Power Transistor 2N3789DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Datasheet: 2N3773
, 2N3774
, 2N3775
, 2N3776
, 2N3777
, 2N3778
, 2N3779
, 2N377A
, A1266
, 2N3780
, 2N3781
, 2N3782
, 2N3783
, 2N3784
, 2N3785
, 2N3788
, 2N3789
.