2N378 Todos los transistores

 

2N378 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N378

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 106 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.1 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO3

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2N378 Datasheet (PDF)

0.1. 2n3789 2n3790 2n3791 2n3792.pdf Size:122K _central

2N378
2N378

DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col

0.2. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N378
2N378

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat

 0.3. 2n3789 2n3790-92.pdf Size:116K _mospec

2N378
2N378

AAA

0.4. 2n3789x.pdf Size:11K _semelab

2N378

2N3789XDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.5. 2n3789xsmd.pdf Size:10K _semelab

2N378

2N3789XSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

0.6. 2n3789.pdf Size:184K _inchange_semiconductor

2N378
2N378

isc Silicon PNP Power Transistor 2N3789DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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