GSDR10025 Specs and Replacement

Type Designator: GSDR10025

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 GSDR10025 Substitution

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GSDR10025 datasheet

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Detailed specifications: GS9020, GS9020G, GS9020H, GS9021, GS9022, GSDB10008, GSDR10020, GSDR10020I, TIP2955, GSDR10025I, GSDR15020, GSDR15020I, GSDR15025, GSDR15025I, GSDS50018, GSDS50020, GSDU7530

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